APT102GA60B2
IGBT 600V 183A 780W TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT102GA60B2 is a POWER MOS 8™ series Insulated Gate Bipolar Transistor (IGBT) with a 600V collector-emitter breakdown voltage and a maximum continuous collector current of 183A in a TO-247-3 Variant package. This PT IGBT features a maximum power dissipation of 780W and a pulsed collector current rating of 307A. Key switching characteristics include a gate charge of 294nC and switching energy of 1.354mJ (on) and 1.614mJ (off) at a test condition of 400V, 62A, 4.7 Ohm, 15V. The on-state voltage (Vce(on)) is a maximum of 2.5V at 15V Vge and 62A Ic, with typical turn-on and turn-off delays of 28ns and 212ns respectively. Operating temperature ranges from -55°C to 150°C (TJ). This component finds application in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: POWER MOS 8™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 62A |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 28ns/212ns |
| Switching Energy | 1.354mJ (on), 1.614mJ (off) |
| Test Condition | 400V, 62A, 4.7Ohm, 15V |
| Gate Charge | 294 nC |
| Current - Collector (Ic) (Max) | 183 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 307 A |
| Power - Max | 780 W |
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