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APT102GA60B2

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APT102GA60B2

IGBT 600V 183A 780W TO247

Manufacturer: Microchip Technology

Categories: Single IGBTs

Quality Control: Learn More

Microchip Technology APT102GA60B2 is a POWER MOS 8™ series Insulated Gate Bipolar Transistor (IGBT) with a 600V collector-emitter breakdown voltage and a maximum continuous collector current of 183A in a TO-247-3 Variant package. This PT IGBT features a maximum power dissipation of 780W and a pulsed collector current rating of 307A. Key switching characteristics include a gate charge of 294nC and switching energy of 1.354mJ (on) and 1.614mJ (off) at a test condition of 400V, 62A, 4.7 Ohm, 15V. The on-state voltage (Vce(on)) is a maximum of 2.5V at 15V Vge and 62A Ic, with typical turn-on and turn-off delays of 28ns and 212ns respectively. Operating temperature ranges from -55°C to 150°C (TJ). This component finds application in industrial power supplies, motor control, and renewable energy systems.

Additional Information

Series: POWER MOS 8™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 62A
IGBT TypePT
Td (on/off) @ 25°C28ns/212ns
Switching Energy1.354mJ (on), 1.614mJ (off)
Test Condition400V, 62A, 4.7Ohm, 15V
Gate Charge294 nC
Current - Collector (Ic) (Max)183 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)307 A
Power - Max780 W

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