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APT100GN60LDQ4G

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APT100GN60LDQ4G

IGBT TRENCH FS 600V 229A TO264

Manufacturer: Microchip Technology

Categories: Single IGBTs

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Microchip Technology APT100GN60LDQ4G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 229 A, with a pulsed current capability of 300 A. The IGBT type utilizes Trench Field Stop technology for enhanced performance. Key electrical characteristics include a maximum collector-emitter saturation voltage (Vce(on)) of 1.85V at 15V gate-emitter voltage and 100A collector current. Switching characteristics are specified with turn-on delay (Td(on)) of 31ns and turn-off delay (Td(off)) of 310ns at 25°C, with switching energies of 4.75mJ (on) and 2.675mJ (off). The device offers a maximum power dissipation of 625 W and operates across a temperature range of -55°C to 175°C (TJ). This IGBT is packaged in a TO-264-3, TO-264AA (TO-264 [L]) through-hole format. It finds application in industries such as industrial motor drives and power factor correction.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 100A
Supplier Device PackageTO-264 [L]
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C31ns/310ns
Switching Energy4.75mJ (on), 2.675mJ (off)
Test Condition400V, 100A, 1Ohm, 15V
Gate Charge600 nC
Current - Collector (Ic) (Max)229 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)300 A
Power - Max625 W

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