APT100GN60LDQ4G
IGBT TRENCH FS 600V 229A TO264Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT100GN60LDQ4G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 229 A, with a pulsed current capability of 300 A. The IGBT type utilizes Trench Field Stop technology for enhanced performance. Key electrical characteristics include a maximum collector-emitter saturation voltage (Vce(on)) of 1.85V at 15V gate-emitter voltage and 100A collector current. Switching characteristics are specified with turn-on delay (Td(on)) of 31ns and turn-off delay (Td(off)) of 310ns at 25°C, with switching energies of 4.75mJ (on) and 2.675mJ (off). The device offers a maximum power dissipation of 625 W and operates across a temperature range of -55°C to 175°C (TJ). This IGBT is packaged in a TO-264-3, TO-264AA (TO-264 [L]) through-hole format. It finds application in industries such as industrial motor drives and power factor correction.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 100A |
| Supplier Device Package | TO-264 [L] |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 31ns/310ns |
| Switching Energy | 4.75mJ (on), 2.675mJ (off) |
| Test Condition | 400V, 100A, 1Ohm, 15V |
| Gate Charge | 600 nC |
| Current - Collector (Ic) (Max) | 229 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 625 W |
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