APT100GN60B2G
IGBT TRENCH FIELD STOP 600V 229AManufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT100GN60B2G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 229 A, with a pulsed capability of 300 A. The maximum power dissipation is rated at 625 W. Key electrical characteristics include a typical Vce(on) of 1.85 V at 15 V gate-emitter voltage and 100 A collector current. Switching performance is characterized by a gate charge of 600 nC, with turn-on and turn-off switching energies of 4.7 mJ and 2.675 mJ respectively, at specified test conditions. The device operates across a wide temperature range from -55°C to 175°C (TJ). The APT100GN60B2G is packaged in a TO-247-3 Variant, facilitating through-hole mounting. This IGBT is suitable for use in industrial power conversion, motor drives, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 100A |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 31ns/310ns |
| Switching Energy | 4.7mJ (on), 2.675mJ (off) |
| Test Condition | 400V, 100A, 1Ohm, 15V |
| Gate Charge | 600 nC |
| Current - Collector (Ic) (Max) | 229 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 625 W |
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