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APT100GN60B2G

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APT100GN60B2G

IGBT TRENCH FIELD STOP 600V 229A

Manufacturer: Microchip Technology

Categories: Single IGBTs

Quality Control: Learn More

Microchip Technology APT100GN60B2G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 229 A, with a pulsed capability of 300 A. The maximum power dissipation is rated at 625 W. Key electrical characteristics include a typical Vce(on) of 1.85 V at 15 V gate-emitter voltage and 100 A collector current. Switching performance is characterized by a gate charge of 600 nC, with turn-on and turn-off switching energies of 4.7 mJ and 2.675 mJ respectively, at specified test conditions. The device operates across a wide temperature range from -55°C to 175°C (TJ). The APT100GN60B2G is packaged in a TO-247-3 Variant, facilitating through-hole mounting. This IGBT is suitable for use in industrial power conversion, motor drives, and power supply applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 100A
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C31ns/310ns
Switching Energy4.7mJ (on), 2.675mJ (off)
Test Condition400V, 100A, 1Ohm, 15V
Gate Charge600 nC
Current - Collector (Ic) (Max)229 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)300 A
Power - Max625 W

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