APT100GN120B2G
IGBT TRENCH FIELD STP 1200V 245AManufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT100GN120B2G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component offers a collector-emitter voltage of 1200 V and a continuous collector current rating of 245 A, with a pulsed capability of 300 A. Key characteristics include a maximum power dissipation of 960 W and a gate charge of 540 nC. The IGBT Type is Trench Field Stop, with a standard input. Switching performance is specified with switching energy of 11mJ (on) and 9.5mJ (off) under test conditions of 800V, 100A, 1Ohm, 15V, with turn-on/off delays of 50ns/615ns respectively. The on-state voltage (Vce(on)) is a maximum of 2.1V at 15V gate-emitter voltage and 100A collector current. It is housed in a TO-247-3 Variant package and mounts via a through-hole configuration. The operating temperature range is -55°C to 150°C (TJ). This device is suitable for use in power factor correction, motor control, and industrial power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 100A |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 50ns/615ns |
| Switching Energy | 11mJ (on), 9.5mJ (off) |
| Test Condition | 800V, 100A, 1Ohm, 15V |
| Gate Charge | 540 nC |
| Current - Collector (Ic) (Max) | 245 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 960 W |
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