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APT100GN120B2G

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APT100GN120B2G

IGBT TRENCH FIELD STP 1200V 245A

Manufacturer: Microchip Technology

Categories: Single IGBTs

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Microchip Technology APT100GN120B2G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component offers a collector-emitter voltage of 1200 V and a continuous collector current rating of 245 A, with a pulsed capability of 300 A. Key characteristics include a maximum power dissipation of 960 W and a gate charge of 540 nC. The IGBT Type is Trench Field Stop, with a standard input. Switching performance is specified with switching energy of 11mJ (on) and 9.5mJ (off) under test conditions of 800V, 100A, 1Ohm, 15V, with turn-on/off delays of 50ns/615ns respectively. The on-state voltage (Vce(on)) is a maximum of 2.1V at 15V gate-emitter voltage and 100A collector current. It is housed in a TO-247-3 Variant package and mounts via a through-hole configuration. The operating temperature range is -55°C to 150°C (TJ). This device is suitable for use in power factor correction, motor control, and industrial power supply applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 100A
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C50ns/615ns
Switching Energy11mJ (on), 9.5mJ (off)
Test Condition800V, 100A, 1Ohm, 15V
Gate Charge540 nC
Current - Collector (Ic) (Max)245 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)300 A
Power - Max960 W

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