TP5335MF-G-VAO
MOSFET, P-CHANNEL ENHANCEMENT-MOManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
P-Channel 350 V 85mA (Tj) 360mW (Ta) Surface Mount 6-DFN (2x2)
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85mA (Tj) |
| Rds On (Max) @ Id, Vgs | 30Ohm @ 200mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Supplier Device Package | 6-DFN (2x2) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 350 V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 25 V |
| Qualification | AEC-Q100 |
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