TP2640N3-G
MOSFET P-CH 400V 180MA TO92-3Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's TP2640N3-G is a P-Channel MOSFET designed for applications requiring high voltage switching. This component features a Drain-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 180mA at 25°C. The Rds On is specified at 15 Ohms maximum at 300mA, 10V gate-source voltage. With a maximum power dissipation of 1W (Ta) and an operating temperature range of -55°C to 150°C, it offers robust performance. The device utilizes Metal Oxide technology and comes in a TO-92-3 package, suitable for through-hole mounting. Input capacitance (Ciss) is a maximum of 300 pF at 25V. This MOSFET is commonly employed in power supply circuits, lighting control, and general-purpose switching applications within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180mA (Tj) |
| Rds On (Max) @ Id, Vgs | 15Ohm @ 300mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-92-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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