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TP2424N8-G

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TP2424N8-G

MOSFET P-CH 240V 316MA TO243AA

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology TP2424N8-G is a P-Channel MOSFET designed for demanding applications. This surface mount component, housed in a TO-243AA (SOT-89) package, offers a drain-to-source voltage (Vdss) of 240V. It supports a continuous drain current (Id) of 316mA at 25°C, with a maximum power dissipation of 1.6W (Ta). The on-resistance (Rds On) is specified at 8 Ohms maximum at 500mA and 10V Vgs. Drive voltage ranges from 4.5V to 10V. Key parameters include an input capacitance (Ciss) of 200pF at 25V and a gate-source threshold voltage (Vgs(th)) of 2.4V at 1mA. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in industrial and power management systems. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C316mA (Tj)
Rds On (Max) @ Id, Vgs8Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Vgs(th) (Max) @ Id2.4V @ 1mA
Supplier Device PackageTO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)240 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V

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