TN2540N3-G-P002
MOSFET N-CH 400V 175MA TO92-3Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology TN2540N3-G-P002 is an N-Channel power MOSFET designed for high voltage applications. This component features a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 175mA at 25°C (Tj). The TN2540N3-G-P002 offers a maximum on-resistance (Rds On) of 12 Ohms at 500mA and 10V gate-source voltage. Its TO-92-3 package is suitable for through-hole mounting. Key parameters include an input capacitance (Ciss) of 125 pF at 25V and a gate-source threshold voltage (Vgs(th)) of 2V at 1mA. The operating temperature range for this device is -55°C to 150°C (TJ). Power dissipation is rated at 1W (Ta). This MOSFET is utilized in various industrial applications demanding robust high-voltage switching capabilities. The TN2540N3-G-P002 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 175mA (Tj) |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-92-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 125 pF @ 25 V |
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