MSC400SMA330B4
MOSFET SIC 3300 V 400 MOHM TO-24Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology's MSC400SMA330B4 is an N-Channel Silicon Carbide MOSFET designed for high-voltage applications. This through-hole component features a drain-to-source voltage (Vdss) of 3300 V and a continuous drain current (Id) of 11 A at 25°C. With a maximum on-resistance (Rds On) of 520 mOhm at 5 A and 20 V, and a power dissipation of 131 W (Tc), it is suitable for demanding power conversion and control systems. The device offers a gate-source voltage (Vgs) range of +23V/-10V and a threshold voltage (Vgs(th)) of 2.97V at 1mA. Key capacitances include input capacitance (Ciss) of 579 pF at 2400 V and gate charge (Qg) of 37 nC at 20 V. Operating across a temperature range of -55°C to 150°C (TJ), this TO-247-4 packaged device finds application in industries such as industrial power supplies and electric vehicle charging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 7 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 5A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 131W (Tc) |
| Vgs(th) (Max) @ Id | 2.97V @ 1mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +23V, -10V |
| Drain to Source Voltage (Vdss) | 3300 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 579 pF @ 2400 V |
Request a Quote
Clients Also Buy
MSC080SMA120SDT/R
MOSFET SIC 1200 V 80 MOHM TO-263
MCP87130T-U/LC
MOSFET N-CH 25V 43A 8PDFN
LND150N3-G
MOSFET N-CH 500V 30MA TO92-3
