MSC080SMA330B4
MOSFET SIC 3300 V 80 MOHM TO-247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology MSC080SMA330B4 is an N-Channel SiCFET with a drain-source voltage (Vdss) of 3300 V. This component features a low on-resistance (Rds On) of 105mOhm at 30A and 20V, and a continuous drain current (Id) of 41A at 25°C (Tc). The maximum power dissipation is 381W (Tc). Gate charge (Qg) is 55 nC at 20 V, and input capacitance (Ciss) is 3462 pF at 2400 V. The device operates with a gate-source voltage range of +23V to -10V and a threshold voltage (Vgs(th)) of 2.97V at 3mA. Supplied in a TO-247-4 package, this MOSFET is suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). Applications include high-voltage power conversion in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 7 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 30A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 381W (Tc) |
| Vgs(th) (Max) @ Id | 2.97V @ 3mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +23V, -10V |
| Drain to Source Voltage (Vdss) | 3300 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3462 pF @ 2400 V |
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