MSC025SMA330B4N
MOSFET SIC 3300V 25 MOHM TO-247-Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's MSC025SMA330B4N is an N-Channel Silicon Carbide (SiC) MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 3300 V and a continuous drain current (Id) of 104 A at 25°C. With a low on-resistance specified through its 25 mOhm rating, the MSC025SMA330B4N offers efficient power switching. The device is housed in a TO-247-4 package for through-hole mounting, and it operates within a temperature range of -55°C to 150°C. This SiC MOSFET is suitable for demanding applications in areas such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 104A |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247-4 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 3300 V |
| Qualification | - |
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