MSC015SMA070B4N
MOSFET SIC 700 V 15 MOHM TO-247-Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's MSC015SMA070B4N is an N-channel Silicon Carbide (SiC) MOSFET designed for high-performance power applications. This through-hole component features a drain-source voltage (Vdss) of 700 V and a continuous drain current (Id) of 112 A at 25°C, with a maximum power dissipation of 524 W (Tc). The device exhibits a low on-resistance (Rds On) of 19 mOhm at 40 A and 20 V gate drive. Key parameters include a maximum gate charge (Qg) of 215 nC at 20 V and input capacitance (Ciss) of 4324 pF at 700 V. The TO-247-4 package is suitable for demanding thermal environments, with an operating temperature range of -55°C to 175°C (TJ). This SiC MOSFET is utilized in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 112A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 524W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-247-4 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +23V, -10V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4324 pF @ 700 V |
| Qualification | - |
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