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MIC94053BC6-TR

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MIC94053BC6-TR

MOSFET P-CH 6V 2A SC70-6

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microchip Technology MIC94053BC6-TR is a P-Channel MOSFET designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 6V and a continuous drain current (Id) of 2A at 25°C. The Rds On is specified at a maximum of 84mOhm when driven at 4.5V with a gate current of 100mA. The device operates within an ambient temperature range of -40°C to 150°C (TJ) and has a maximum power dissipation of 270mW (Ta). This MOSFET utilizes Metal Oxide technology and is supplied in a compact SC-70-6 package, suitable for surface mounting. Drive voltage requirements range from 1.8V to 4.5V for optimal Rds On performance. The threshold voltage (Vgs(th)) is a maximum of 1.2V at 250µA. The MIC94053BC6-TR is commonly employed in portable electronics and power management circuits. The component is provided in a Tape & Reel (TR) configuration.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs84mOhm @ 100mA, 4.5V
FET Feature-
Power Dissipation (Max)270mW (Ta)
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device PackageSC-70-6
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)6V
Drain to Source Voltage (Vdss)6 V

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