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MIC94050BM4 TR

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MIC94050BM4 TR

MOSFET P-CH 6V 1.8A SOT-143

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology's MIC94050BM4-TR is a P-Channel SymFET™ MOSFET designed for demanding applications. This device features a 6V Vds rating and a continuous drain current capability of 1.8A at 25°C. The P-Channel MOSFET offers low on-resistance (Rds(on)) of 160mOhm maximum at 100mA and 4.5V Vgs. With a power dissipation of 568mW, it is suitable for compact designs. The SOT-143 package facilitates surface mounting. Key parameters include a gate-source threshold voltage (Vgs(th)) of 1.2V maximum at 250µA and a maximum gate-source voltage (Vgs) of 6V. Input capacitance (Ciss) is 600pF maximum at 5.5V. Operating temperature range is -40°C to 150°C. This component finds application in areas such as power management and general switching. The device is supplied on tape and reel for automated assembly.

Additional Information

Series: SymFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-253-4, TO-253AA
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Rds On (Max) @ Id, Vgs160mOhm @ 100mA, 4.5V
FET Feature-
Power Dissipation (Max)568mW (Ta)
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device PackageSOT-143
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)6V
Drain to Source Voltage (Vdss)6 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 5.5 V

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