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MCP87055T-U/LC

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MCP87055T-U/LC

MOSFET N-CH 25V 60A 8PDFN

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology MCP87055T-U-LC is an N-Channel MOSFET designed for high-efficiency power conversion. This component features a 25V drain-source breakdown voltage and supports a continuous drain current of 60A at 25°C case temperature. The device exhibits a low on-resistance of 6mOhm maximum at 20A and 10V gate-source voltage, facilitating minimal conduction losses. Key parameters include a gate charge of 14 nC maximum at 4.5V Vgs and an input capacitance of 890 pF maximum at 12.5V Vds. The MCP87055T-U-LC is housed in an 8-PDFN (3.3x3.3) surface mount package, offering excellent thermal performance with a power dissipation of 1.8W at 25°C ambient. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for applications in automotive, industrial power supplies, and battery management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Vgs(th) (Max) @ Id1.7V @ 250µA
Supplier Device Package8-PDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)+10V, -8V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds890 pF @ 12.5 V

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