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MCP87022T-U/MF

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MCP87022T-U/MF

MOSFET N-CH 25V 100A 8PDFN

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology MCP87022T-U-MF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 25V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C (Tc). The low on-resistance (Rds On) of 2.3mOhm at 25A and 10V gate-source voltage significantly minimizes conduction losses. The MOSFET offers a gate charge (Qg) of 29 nC maximum at 4.5V and input capacitance (Ciss) of 2310 pF maximum at 12.5V, enabling fast switching performance. It is available in an 8-PDFN (5x6) surface mount package, suitable for demanding thermal management. With a maximum power dissipation of 2.2W (Ta), this component is ideal for use in automotive, industrial, and power supply applications requiring robust and efficient power handling. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs2.3mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)2.2W (Ta)
Vgs(th) (Max) @ Id1.6V @ 250µA
Supplier Device Package8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)+10V, -8V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2310 pF @ 12.5 V

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