APTM50UM09FAG
MOSFET N-CH 500V 497A SP6Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APTM50UM09FAG is an N-Channel MOSFET designed for high-power applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 497A at 25°C (Tc). The low on-resistance (Rds On) of 10mOhm is achieved at a drain current of 248.5A and a gate-source voltage (Vgs) of 10V. The APTM50UM09FAG is packaged in a chassis mount SP6, allowing for efficient thermal management with a maximum power dissipation of 5000W (Tc). Key electrical characteristics include an input capacitance (Ciss) of 63300pF and a gate charge (Qg) of 1200nC, both specified at 10V drive. This device is suitable for use in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems. Operating temperature range is from -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 497A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 248.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5000W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 30mA |
| Supplier Device Package | SP6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 1200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 63300 pF @ 25 V |
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