APTM20UM03FAG
MOSFET N-CH 200V 580A SP6Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology APTM20UM03FAG is an N-Channel POWER MOS 7® series MOSFET designed for high-power applications. This component features a Drain to Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 580 A at 25°C (Tc), with a maximum power dissipation of 2270 W (Tc). The Rds On is specified at a maximum of 3.6 mOhm at 290 A and 10 V. Key parameters include a Gate Charge (Qg) of 840 nC at 10 V and an input capacitance (Ciss) of 43300 pF at 25 V. The device operates with a drive voltage of 10V and has a maximum Vgs of ±30V. Mounting is chassis mount, and the operating temperature range is -40°C to 150°C (TJ). The package type is SP6. This MOSFET is utilized in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 580A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 290A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2270W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 15mA |
| Supplier Device Package | SP6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 840 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 43300 pF @ 25 V |
Request a Quote
Clients Also Buy
APT1201R2BFLLG
MOSFET N-CH 1200V 12A TO247
APT15GP60BDQ1G
IGBT PT 600V 56A TO247
APT10090BLLG
MOSFET N-CH 1000V 12A TO247
