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APTM120DA30CT1G

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APTM120DA30CT1G

MOSFET N-CH 1200V 31A SP1

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 1200 V 31A (Tc) 657W (Tc) Chassis Mount SP1

Additional Information

Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSP1
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Rds On (Max) @ Id, Vgs360mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)657W (Tc)
Vgs(th) (Max) @ Id5V @ 2.5mA
Supplier Device PackageSP1
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds14560 pF @ 25 V

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