APTM10UM02FAG
MOSFET N-CH 100V 570A SP6Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APTM10UM02FAG is an N-Channel MOSFET with a Drain-Source Voltage (Vdss) of 100 V. This component features a continuous drain current (Id) of 570A at 25°C (Tc) and can dissipate up to 1660W (Tc). The Rds On is specified at a maximum of 2.5mOhm at 200A and 10V drive voltage. Gate charge (Qg) is 1360 nC at 10V, with input capacitance (Ciss) at 40000 pF at 25V. The device utilizes MOSFET technology and has a maximum gate-source voltage (Vgs) of ±30V. The gate threshold voltage (Vgs(th)) is 4V at 10mA. This chassis mount component is supplied in an SP6 package. It is suitable for applications in power supply systems and electric vehicles.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 570A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 200A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1660W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | SP6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 1360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40000 pF @ 25 V |
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