APTM10UM01FAG
MOSFET N-CH 100V 860A SP6Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology APTM10UM01FAG is an N-Channel power MOSFET designed for high-power applications. This component features a Drain to Source Voltage (Vdss) of 100 V and a continuous drain current (Id) rating of 860A at 25°C (Tc), with a maximum power dissipation of 2500W (Tc). The Rds On is specified at a low 1.6mOhm at 275A and 10V drive voltage. Key electrical characteristics include a gate charge (Qg) of 2100 nC @ 10 V and input capacitance (Ciss) of 60000 pF @ 25 V. This MOSFET utilizes a chassis mount package, specifically the SP6, suitable for demanding thermal management. It operates across a temperature range of -40°C to 150°C (TJ). This component is commonly deployed in industrial power conversion, electric vehicle powertrains, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 860A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 275A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 12mA |
| Supplier Device Package | SP6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 60000 pF @ 25 V |
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