APTM100UM60FAG
MOSFET N-CH 1000V 129A SP6Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology APTM100UM60FAG is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 1000V and offers a continuous drain current (Id) of 129A at 25°C with a maximum power dissipation of 2272W (Tc). The Rds On is specified at a maximum of 70mOhms at 64.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 1116 nC at 10V and an input capacitance (Ciss) of 31100 pF at 25V. The device operates across a temperature range of -40°C to 150°C (TJ) and utilizes a chassis mountable SP6 package. This MOSFET is suitable for demanding applications in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 129A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 64.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2272W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 15mA |
| Supplier Device Package | SP6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 1116 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 31100 pF @ 25 V |
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