APTM100UM45FAG
MOSFET N-CH 1000V 215A SP6Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APTM100UM45FAG is a high-performance N-Channel MOSFET designed for demanding power applications. This component features a drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 215 A at 25°C, with a maximum power dissipation of 5000 W. The Rds On is specified at a maximum of 52 mOhm at 107.5 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 1602 nC at 10 V and an input capacitance (Ciss) of 42700 pF at 25 V. Designed for chassis mounting, the APTM100UM45FAG operates within a temperature range of -40°C to 150°C. This MOSFET is suitable for use in renewable energy systems, industrial motor control, and high-voltage power conversion applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 215A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 107.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5000W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 30mA |
| Supplier Device Package | SP6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 1602 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 42700 pF @ 25 V |
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