APTC60DAM18CTG
MOSFET N-CH 600V 143A SP4Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology CoolMOS™ N-Channel Power MOSFET, part number APTC60DAM18CTG, offers 600V drain-source voltage and 143A continuous drain current at 25°C. This chassis-mount device features a maximum on-resistance of 18mOhm at 71.5A and 10V gate-source voltage. With 833W maximum power dissipation and a gate charge of 1036 nC, it is suitable for demanding applications. The APTC60DAM18CTG utilizes Metal Oxide technology and operates across a temperature range of -40°C to 150°C. This component is commonly employed in power supply units, motor control, and industrial automation systems. The SP4 package is supplied in bulk.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 143A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 71.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 833W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 4mA |
| Supplier Device Package | SP4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 1036 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 28000 pF @ 25 V |