APT9M100B
MOSFET N-CH 1000V 9A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 1000 V 9A (Tc) 335W (Tc) Through Hole TO-247 [B]
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 335W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2605 pF @ 25 V |
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