APT9F100B
MOSFET N-CH 1000V 9A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT9F100B is an N-Channel Power MOSFET from the POWER MOS 8™ series. This component offers a 1000 V drain-source voltage and a continuous drain current of 9 A at 25°C (Tc), with a maximum power dissipation of 337 W (Tc). It features a low on-resistance of 1.6 Ohm maximum at 5 A and 10 V Vgs. Key parameters include a gate charge of 80 nC maximum at 10 V Vgs and input capacitance of 2606 pF maximum at 25 V Vds. The device is housed in a TO-247-3 through-hole package, designed for efficient thermal management. Its robust construction and high voltage capability make it suitable for applications in power supply units, motor control, and industrial power conversion. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 337W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2606 pF @ 25 V |
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