APT94N65B2C6
MOSFET N-CH 650V 95A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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This Microchip Technology APT94N65B2C6 is an N-Channel Power MOSFET designed for high-voltage applications. It features a continuous drain current capability of 95A at 25°C (Tc) and a drain-to-source voltage (Vdss) of 650V. The device offers a low on-resistance (Rds On) of 35mOhm maximum at 35.2A and 10V gate-source voltage. With a maximum power dissipation of 833W (Tc) and through-hole mounting in a TO-247-3 Variant package, it is suitable for demanding power conversion systems. Key parameters include a gate charge (Qg) of 320 nC at 10V and input capacitance (Ciss) of 8140 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This component finds application in areas such as industrial power supplies and electric vehicle charging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 35.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 833W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 3.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 320 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8140 pF @ 25 V |
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