APT94N60L2C3G
MOSFET N-CH 600V 94A 264 MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT94N60L2C3G is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 94A at 25°C (Tc), with a maximum power dissipation of 833W (Tc). The device exhibits a low on-resistance (Rds On) of 35mOhm at 60A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 640 nC at 10V and input capacitance (Ciss) of 13600 pF at 25V. It is packaged in a TO-264-3, TO-264AA (264 MAX™ [L2]) through-hole configuration, operating within a temperature range of -55°C to 150°C. This MOSFET is suitable for various power conversion and control systems across industrial and high-power electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 94A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 833W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 5.4mA |
| Supplier Device Package | 264 MAX™ [L2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 640 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 25 V |
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