APT84F50B2
MOSFET N-CH 500V 84A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT84F50B2 is an N-Channel power MOSFET from the POWER MOS 8™ series. This component features a 500V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 84A at 25°C, with a maximum power dissipation of 1135W (Tc). The device exhibits a low on-resistance (Rds On) of 65mOhm at 42A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 340nC at 10V and input capacitance (Ciss) of 13500pF at 25V. The APT84F50B2 is housed in a T-MAX™ [B2] package, a TO-247-3 variant, designed for through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This robust MOSFET is suitable for applications in power conversion, industrial motor control, and high-voltage power supplies.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1135W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 340 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13500 pF @ 25 V |
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