APT80F60J
MOSFET N-CH 600V 84A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology POWER MOS 8™ APT80F60J is an N-Channel power MOSFET designed for high-power switching applications. This component features a drain-to-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 84 A at 25°C, with a maximum power dissipation of 961 W. The on-resistance (Rds On) is specified at a maximum of 55 mOhms at 60 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 598 nC at 10 V and input capacitance (Ciss) of 23994 pF at 25 V. The APT80F60J utilizes a chassis mount ISOTOP® package (SOT-227-4, miniBLOC) for efficient thermal management. This device is suitable for use in industries such as industrial power supplies, renewable energy systems, and electric vehicle drivetrains. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 961W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 598 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 23994 pF @ 25 V |