APT8030JVFR
MOSFET N-CH 800V 25A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology POWER MOS V® APT8030JVFR is an N-Channel enhancement mode MOSFET offering an 800 V drain-source voltage (Vdss) and a continuous drain current (Id) of 25 A at 25°C (Tc). This device features a low on-resistance (Rds On) of 300 mOhm maximum at 500 mA and 10 V, and a gate charge (Qg) of 510 nC maximum at 10 V. Input capacitance (Ciss) is specified at 7900 pF maximum at 25 V. The APT8030JVFR is housed in an ISOTOP® package (SOT-227-4, miniBLOC) with a chassis mount type, facilitating efficient thermal management. This component is suitable for high-voltage applications in power factor correction, power supply, and motor drive systems.
Additional Information
Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 500mA, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 510 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7900 pF @ 25 V |
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