APT8024JLL
MOSFET N-CH 800V 29A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology POWER MOS 7® APT8024JLL is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Vdss rating of 800 V and a continuous drain current capability of 29 A at 25°C (Tc), delivering a maximum power dissipation of 460 W (Tc). The Rds On is specified at a maximum of 240 mOhm at 14.5 A and 10 V Vgs. Key parameters include a gate charge of 160 nC @ 10 V and an input capacitance of 4670 pF @ 25 V. The device is housed in a SOT-227-4, miniBLOC package with ISOTOP® technology for efficient thermal management and is rated for operation from -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supplies, motor control, and industrial power conversion.
Additional Information
Series: POWER MOS 7®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 460W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4670 pF @ 25 V |
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