APT8020LFLLG
MOSFET N-CH 800V 38A TO264Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT8020LFLLG is an N-Channel Power MOSFET from the POWER MOS 7® series, featuring a drain-source voltage (Vdss) of 800 V. This component offers a continuous drain current (Id) of 38A (Tc) and a maximum power dissipation of 694W (Tc). The ON-resistance (Rds On) is specified at 220mOhm maximum at 19A and 10V gate drive. Key parameters include a gate charge (Qg) of 195 nC at 10V and input capacitance (Ciss) of 5200 pF at 25V. The device is housed in a TO-264 [L] package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for high-voltage switching applications across various industrial sectors.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 694W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | TO-264 [L] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 25 V |