APT8015JVFR
MOSFET N-CH 800V 44A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT8015JVFR is an N-Channel POWER MOS V® MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 44A at 25°C (Tc). The device is housed in an ISOTOP® package (SOT-227-4, miniBLOC) for chassis mounting, facilitating efficient thermal management. Key electrical parameters include a maximum Rds On of 150mOhm at 500mA and 10V, and a Gate Charge (Qg) of 285 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 17650 pF at 25 V. This MOSFET is suitable for power factor correction, switched-mode power supplies, and industrial motor control applications.
Additional Information
Series: POWER MOS V®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 500mA, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Supplier Device Package | ISOTOP® |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 285 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17650 pF @ 25 V |
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