APT7F120B
MOSFET N-CH 1200V 7A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT7F120B is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) capability of 7 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 2.9 Ohms at 3 A and 10 V gate-source voltage (Vgs). With a maximum power dissipation of 335 W (Tc), it is suitable for demanding power conversion tasks. Key parameters include a gate charge (Qg) of 80 nC (Max) @ 10 V and input capacitance (Ciss) of 2565 pF (Max) @ 25 V. The MOSFET is housed in a TO-247-3 through-hole package, specified for operation between -55°C and 150°C (TJ). This component finds application in power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 335W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2565 pF @ 25 V |
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