APT7F100B
MOSFET N-CH 1000V 7A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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This Microchip Technology N-Channel Power MOSFET, part number APT7F100B, offers a drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 7A at 25°C. The device features a maximum on-resistance (Rds On) of 2 Ohms at 4A and 10V, with a gate charge (Qg) of 58 nC at 10V. With a maximum power dissipation of 290W (Tc), this MOSFET utilizes Metal Oxide technology and is housed in a TO-247-3 through-hole package. Key electrical parameters include an input capacitance (Ciss) of 1800 pF at 25V and a gate-source threshold voltage (Vgs(th)) of 5V at 500µA. The operating temperature range is from -55°C to 150°C. This component is suitable for applications in power supply units and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 290W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 500µA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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