APT77N60JC3
MOSFET N-CH 600V 77A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology APT77N60JC3 is a high-performance N-Channel Power MOSFET featuring a 600V drain-source voltage and a continuous drain current capability of 77A at 25°C. This device offers a low on-resistance of 35mOhm maximum at 60A and 10V gate-source voltage. With a maximum power dissipation of 568W at the case temperature, it is designed for demanding applications. The MOSFET utilizes ISOTOP® packaging for efficient thermal management and chassis mounting. Key parameters include a gate charge of 640nC at 10V and input capacitance of 13600pF at 25V. Operating temperature range is -55°C to 150°C. This component is suitable for use in power factor correction, motor control, and uninterruptible power supply systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 568W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 5.4mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 640 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 25 V |
Request a Quote
Clients Also Buy
MRH15N19U3SR
RH MOSFET 150V U3
APT10M19SVRG
MOSFET N-CH 100V 75A D3PAK
MSC360SMA120B
MOSFET SIC 1200 V 360 MOHM TO-24
