APT77N60BC6
MOSFET N-CH 600V 77A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology presents the APT77N60BC6, a CoolMOS™ N-Channel Power MOSFET. This through-hole component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 77 A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 41 mOhm at 44.4 A and 10 V drive voltage, with a power dissipation capability of 481 W at 25°C. Key parameters include a gate charge (Qg) of 260 nC at 10 V and input capacitance (Ciss) of 13600 pF at 25 V. The TO-247-3 package is suitable for high-power applications. This MOSFET is engineered for demanding applications in power supply, motor control, and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 44.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 481W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 2.96mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 25 V |
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