APT75F50B2
MOSFET N-CH 500V 75A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology APT75F50B2 is an N-channel MOSFET from the POWER MOS 8™ series, designed for high-power applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 75 A at 25°C. The low on-resistance, specified as 75 mOhm maximum at 37 A and 10 V, combined with a maximum power dissipation of 1040 W at the case temperature, makes it suitable for demanding power conversion tasks. Key parameters include a gate charge (Qg) of 290 nC at 10 V and input capacitance (Ciss) of 11600 pF at 25 V. The MOSFET is housed in a T-MAX™ [B2] package, a variant of the TO-247-3, for through-hole mounting. Operating temperature range is from -55°C to 150°C (TJ). This component finds application in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1040W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 290 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11600 pF @ 25 V |
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