APT66F60L
MOSFET N-CH 600V 70A TO264Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT66F60L is an N-Channel Power MOSFET from the POWER MOS 8™ series, designed for high-power switching applications. This component features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 70A at 25°C (Tc). The APT66F60L offers a low on-resistance (Rds On) of 90mOhm maximum at 33A and 10V gate drive. With a maximum power dissipation of 1135W (Tc), it is suitable for demanding applications. Key characteristics include a gate charge (Qg) of 330 nC at 10V and input capacitance (Ciss) of 13190 pF at 25V. The device is packaged in a TO-264-3, TO-264AA through-hole configuration. This MOSFET is widely utilized in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1135W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | TO-264 [L] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13190 pF @ 25 V |
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