APT66F60B2
MOSFET N-CH 600V 70A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT66F60B2 is a N-Channel Power MOSFET from the POWER MOS 8™ series. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 70A at 25°C, with a maximum power dissipation of 1135W at the same temperature. The device exhibits a maximum on-resistance (Rds On) of 90mOhm at 33A and 10V gate-source voltage. Key electrical characteristics include a maximum gate charge (Qg) of 330 nC at 10V and an input capacitance (Ciss) of 13190 pF at 25V. The APT66F60B2 is housed in a through-hole TO-247-3 Variant package, utilizing the T-MAX™ [B2] supplier device package. It operates across a temperature range of -55°C to 150°C (TJ) and is suitable for applications in power supply, industrial, and automotive sectors.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1135W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13190 pF @ 25 V |
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