APT60N60SCSG
MOSFET N-CH 600V 60A D3PAKManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT60N60SCSG is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 60 A at 25°C. With a maximum Power Dissipation (Pd) of 431 W (Tc), it is suitable for demanding thermal environments. The device exhibits a low On-Resistance (Rds On) of 45 mOhm at 44 A and 10 V gate drive, optimizing conduction losses. Key parameters include a Gate Charge (Qg) of 190 nC at 10 V and an Input Capacitance (Ciss) of 7200 pF at 25 V. The APT60N60SCSG is housed in a TO-268-3, D3PAK surface mount package, facilitating automated assembly. This MOSFET is commonly utilized in power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 431W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 3mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V |
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