APT60N60BCSG
MOSFET N-CH 600V 60A TO247Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT60N60BCSG is a 600V N-Channel Power MOSFET packaged in a TO-247-3 through-hole configuration. This device offers a continuous drain current of 60A at 25°C (Tc) and a maximum power dissipation of 431W (Tc). Key electrical specifications include a low Rds(on) of 45mOhm at 44A and 10V, with a gate charge (Qg) of 190 nC at 10V. The input capacitance (Ciss) is 7200 pF at 25V. With a gate-source voltage (Vgs) tolerance of ±30V and a threshold voltage (Vgs(th)) of 3.9V at 3mA, this MOSFET is suitable for demanding applications across power conversion, motor control, and industrial power systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 431W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 3mA |
| Supplier Device Package | TO-247 [B] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V |
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