APT60M75L2FLLG
MOSFET N-CH 600V 73A 264 MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's APT60M75L2FLLG is an N-Channel MOSFET from the POWER MOS 7® series. This through-hole component offers a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 73A at 25°C. It features a maximum Rds On of 75mOhm at 36.5A and 10V gate-source voltage. The device boasts a maximum power dissipation of 893W (Tc) and a gate charge of 195 nC at 10V. With an input capacitance (Ciss) of 8930 pF at 25V, this TO-264-3 package is suitable for high-power switching applications. Its operating temperature range is -55°C to 150°C. This component finds application in power supplies, industrial motor control, and electric vehicle charging systems.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 36.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 893W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | 264 MAX™ [L2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8930 pF @ 25 V |
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