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APT60M75JFLL

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APT60M75JFLL

MOSFET N-CH 600V 58A ISOTOP

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology APT60M75JFLL is an N-Channel POWER MOS 7® MOSFET designed for high-power applications. This component features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 58A at 25°C (Tc), with a maximum power dissipation of 595W (Tc). The Rds On is rated at a maximum of 75mOhm at 29A and 10V gate-source voltage (Vgs). Key characteristics include a gate charge (Qg) of 195 nC at 10V and input capacitance (Ciss) of 8930 pF at 25V. The APT60M75JFLL utilizes a Metal Oxide technology and is housed in a SOT-227-4, miniBLOC package, facilitating chassis mounting. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum Vgs of ±30V. This MOSFET is suitable for use in power supply, industrial motor control, and renewable energy systems.

Additional Information

Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Rds On (Max) @ Id, Vgs75mOhm @ 29A, 10V
FET Feature-
Power Dissipation (Max)595W (Tc)
Vgs(th) (Max) @ Id5V @ 5mA
Supplier Device PackageISOTOP®
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8930 pF @ 25 V

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