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APT6010B2FLLG

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APT6010B2FLLG

MOSFET N-CH 600V 54A T-MAX

Manufacturer: Microchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microchip Technology APT6010B2FLLG is an N-Channel Power MOSFET from the POWER MOS 7® series. This through-hole component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 54 A at 25°C (Tc). The Rds On is specified at 100mOhm maximum at 27A, 10V. Key electrical parameters include a gate charge (Qg) of 150 nC maximum at 10V and input capacitance (Ciss) of 6710 pF maximum at 25V. The device utilizes Metal Oxide technology and is supplied in a TO-247-3 Variant package, identifiable by the T-MAX™ [B2] designation. This component is commonly found in power supply, motor control, and industrial applications.

Additional Information

Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 27A, 10V
FET Feature-
Vgs(th) (Max) @ Id5V @ 2.5mA
Supplier Device PackageT-MAX™ [B2]
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6710 pF @ 25 V

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