APT6010B2FLLG
MOSFET N-CH 600V 54A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT6010B2FLLG is an N-Channel Power MOSFET from the POWER MOS 7® series. This through-hole component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 54 A at 25°C (Tc). The Rds On is specified at 100mOhm maximum at 27A, 10V. Key electrical parameters include a gate charge (Qg) of 150 nC maximum at 10V and input capacitance (Ciss) of 6710 pF maximum at 25V. The device utilizes Metal Oxide technology and is supplied in a TO-247-3 Variant package, identifiable by the T-MAX™ [B2] designation. This component is commonly found in power supply, motor control, and industrial applications.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 27A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6710 pF @ 25 V |
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