APT58F50J
MOSFET N-CH 500V 58A ISOTOPManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology APT58F50J is an N-Channel POWER MOS 8™ MOSFET designed for demanding power applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous drain current (Id) capability of 58A at 25°C (Tc), with a maximum power dissipation of 540W (Tc). The low on-resistance, specified at 65mOhm maximum at 42A and 10V gate drive, minimizes conduction losses. Key electrical parameters include a gate charge (Qg) of 340 nC maximum at 10V and input capacitance (Ciss) of 13500 pF maximum at 25V. The device utilizes a MOSFET (Metal Oxide) technology and is packaged in a Chassis Mount ISOTOP® (SOT-227-4, miniBLOC) for efficient thermal management. Operating temperature ranges from -55°C to 150°C (TJ). The APT58F50J is suitable for use in power factor correction, motor control, and uninterruptible power supply (UPS) systems.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 340 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13500 pF @ 25 V |
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