APT56F60L
MOSFET N-CH 600V 60A TO264Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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Microchip Technology's APT56F60L is an N-Channel POWER MOS 8™ MOSFET designed for high-power switching applications. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 60 A at 25°C (Tc), with a maximum power dissipation of 1040 W (Tc). Key electrical parameters include a maximum on-resistance (Rds On) of 110 mOhm at 28 A and 10 V, and a gate charge (Qg) of 280 nC at 10 V. The input capacitance (Ciss) is specified at a maximum of 11300 pF at 25 V. The APT56F60L is housed in a TO-264 [L] package, requiring a through-hole mounting type, and operates within an extended temperature range of -55°C to 150°C (TJ). This device is suitable for demanding applications in power supply, motor control, and industrial power conversion sectors.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1040W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | TO-264 [L] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11300 pF @ 25 V |
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