APT56F60B2
MOSFET N-CH 600V 60A T-MAXManufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
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The Microchip Technology POWER MOS 8™ APT56F60B2 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 60 A at 25°C. With a maximum power dissipation of 1040 W (Tc) and a low on-resistance of 110 mOhm at 28 A and 10 V, it is suitable for demanding power conversion circuits. The APT56F60B2 utilizes Through Hole mounting in a T-MAX™ [B2] package, providing robust thermal performance. Key parameters include a gate charge (Qg) of 280 nC at 10 V and input capacitance (Ciss) of 11300 pF at 25 V. This MOSFET is commonly found in industrial power supplies, motor control, and electric vehicle charging systems. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1040W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | T-MAX™ [B2] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11300 pF @ 25 V |
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