APT56F50L
MOSFET N-CH 500V 56A TO264Manufacturer: Microchip Technology
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microchip Technology APT56F50L is an N-Channel power MOSFET from the POWER MOS 8™ series. This through-hole component features a Drain-Source Voltage (Vdss) of 500 V and offers a continuous drain current (Id) of 56A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 100mOhm at 28A, 10V, and a gate charge (Qg) of 220 nC at 10V. It supports a maximum power dissipation of 780W (Tc). The APT56F50L is housed in a TO-264 package and is suitable for applications in power supply, industrial motor control, and automotive power systems. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 780W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | TO-264 [L] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 25 V |
Request a Quote
Clients Also Buy
APT53F80J
MOSFET N-CH 800V 57A ISOTOP
APT60GA60JD60
IGBT MOD 600V 112A 356W ISOTOP
APT24F50B
MOSFET N-CH 500V 24A TO247
